項目 | SiO₂-SiC | SiSiC/RBSiC | R-SiC | Si3N4-SiC |
---|---|---|---|---|
SiC % | >85 | 90~92 | >99 | ≥75 |
密度 g/cm3 | 2.65~2.75 | >3.02 | 2.65~2.75 | 2.65~2.85 |
気孔率 % | 15~16 | <0.1 | 15-18 | 13-15 |
曲げ強さ (20℃)Mpa | 90~100 | 260 | 80~100 | 160-180 |
曲げ強さ(1200℃)Mpa | 100~110 | 280 | 90~110 | 170-180 |
圧縮強さ (20℃)Mpa | ≥300 | 900 | ≥300 | 580 |
硬度 Kg/mm2 | 1800~2000 | 2400 | 1800~2000 | 2000-3000 |
熱伝導率 (1200℃)w.m-1.k-1 | 35~36 | 45 | 36 | 19.6 |
熱膨張係数(1200℃) | 4.6 | 4.5 | 4.6 | 4.7 |
最高使用温度 | 1500 | 1380 | 1650 | 1550 |
Silicon Carbide Plate has high temperature resistance (over 1400°C), high hardness and wear resistance, low thermal conductivity and light weight, strong chemical stability and excellent thermal shock stability. It is suitable for high temperature, corrosion and wear resistance scenes, and its performance is better than traditional materials.
Silicon Carbide Plate is mainly used in industrial kilns (furnace linings, annealing furnaces, etc.), semiconductors (CVD equipment carrier plates), photovoltaics (high-temperature diffusion furnace components), mining and chemical industries (wear-resistant and corrosion-resistant linings/pump bodies), new energy (lithium battery sintering, high-temperature resistant parts for hydrogen energy equipment) and extreme precision manufacturing scenarios.